S T M6930A
S amHop Microelectronics C orp. Aug,18 2005 ver1.3
Dual N-C hannel E nhancement Mode Field E ffect Transisto...
S T M6930A
S amHop Microelectronics C orp. Aug,18 2005 ver1.3
Dual N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 55V
F E AT UR E S
( m W ) Max
ID
4.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
50 @ V G S = 10V 75 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol Vspike d V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG
Limit 60 55 20 4.8 4.1 25 1.7 2 1.44 -55 to 150
Unit V V V A A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA
1
62.5
C /W
S T M6930A
E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
c
Condition
V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 4.5A V GS =4.5V, ID= 3A V DS = 5V, V GS = 10V V DS = 5V, ID = 4.5A
Min Typ C Max Unit
55 1 V uA 100 nA 1.0 1.8 38 60 20 7 620 80 33 5 3.2 10.1 8.3 7.2 2.1 3.9 3.8 12 9.6 8.2 2.5 4.5 735 95 35 2.5 50 75 V
m ohm m ohm
OFF CHAR ACTE ...
