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MRF421 Dataheets PDF



Part Number MRF421
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTORS
Datasheet MRF421 DatasheetMRF421 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 100 W (PEP) — IMD = – 30 dB (Min) www.DataSheet4U.com • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MRF421 100 W (PEP), 30 MHz .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 100 W (PEP) — IMD = – 30 dB (Min) www.DataSheet4U.com • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MRF421 100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 20 45 3.0 20 30 290 1.66 – 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 20 45 45 3.0 — — — — — — — — — — 10 Vdc Vdc Vdc Vdc mAdc (continued) REV 1 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF421 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 70 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) Cob — 550 800 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, ICQ = 150 mAdc, f = 30, 30.001 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, www.DataSheet4U.com ICQ = 150 mA, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc, ICQ = 150 mA, f = 30, 30.001 MHz) GPE 10 12 — dB η 40 — — % IMD — – 33 – 30 dB NOTE: 1. To proposed EIA method of measurement. Reference peak envelope power. R1 + BIAS – CR1 L5 C5 C6 L4 L2 C4 RF INPUT C2 L1 D.U.T. C1 R2 C3 L3 C7 C8 C9 C10 + 12.5 Vdc – RF OUTPUT C1, C2, C4 — 170 – 780 pF, ARCO 469 C3 — 80 – 480 pF, ARCO 466 C5, C7, C10 — ERIE 0.1 µF, 100 V C6 — MALLORY 500 µF @ 15 V Electrolytic C9 — 100 µF, 15 V Electrolytic C8 — 1000 pF, 350 V UNDERWOOD R1 — 10 Ω, 25 Watt Wirewound R2 — 10 Ω, 1.0 Watt Carbon CR1 — 1N4997 L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D. L3 — 1–3/4 Turns, 1/8″ Tubing, 3/8″ I.D., 3/8″ Long L4 — 10 µH Molded Choke L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B .


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