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2N6547 Dataheets PDF



Part Number 2N6547
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description (2N6546 / 2N6547) NPN POWER SILICON TRANSISTOR
Datasheet 2N6547 Datasheet2N6547 Datasheet (PDF)

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/525 Devices www.DataSheet4U.com Qualified Level 2N6547 JAN JANTX JANTXV 2N6546 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCEX VEBO IB IC PT Top, Tstg Symbol 2N6546 300 600 2N6547 400 850 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W *See Appendix A for Package Outline @ TC = +250C (1) @ TC = +1000C (1) .

  2N6547   2N6547



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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/525 Devices www.DataSheet4U.com Qualified Level 2N6547 JAN JANTX JANTXV 2N6546 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCEX VEBO IB IC PT Top, Tstg Symbol 2N6546 300 600 2N6547 400 850 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W *See Appendix A for Package Outline @ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Temperature Range 8 10 15 175 100 -65 to +200 TO-3 (TO-204AA)* THERMAL CHARACTERISTICS Max. 1.0 RθJC 1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C Characteristics Thermal Resistance, Junction-to-Case 0 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 600 Vdc; VBE = 1.5 Vdc VCE = 850 Vdc; VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 8 Vdc 2N6546 2N6547 2N6546 2N6547 V(BR)CEO 300 400 1.0 1.0 1.0 Vdc ICEX IEBO mAdc mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6546, 2N6547 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 2 Vdc IC = 5 Adc; VCE = 2 Vdc IC = 10 Adc; VCE = 2 Vdc Base-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc Collector-Emitter Saturated Voltage www.DataSheet4U.com IB = 2.0 Adc; IC = 10 Adc IB = 3.0 Adc; IC = 15 Adc hFE 15 12 6 60 Vdc Vdc VBE(sat) VCE(sat) 1.6 1.5 5.0 DYNAMIC CHARACTERISTICS Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe 6.0 Cobo 30 500 1.0 4.7 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc Turn-Off Time VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc t on µs µs t off SAFE OPERATING AREA DC Tests TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525) Test 1 VCE = 11.7 Vdc; IC = 15 Adc Test 2 VCE = 20 Vdc; IC = 8.75 Adc Test 3 VCE = 250 Vdc; IC = 45 mAdc 2N6546 VCE = 350 Vdc; IC = 30 mAdc 2N6547 Unclamped Inductive lOAD TC = +250C; duty cycle ≤ 10%; RS = 0.1 Ω; tr = tf ≤ 500 ηs (See Figure 4 of MIL-PRF-19500/525) Test 1 Tp = 5 ms; (vary to obtain IC); RBB1 = 15 Ω; VBB1 = 38.5 Vdc; RBB2 = 50 Ω; VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 µH Test 2 Tp = 5 ms; (vary to obtain IC); RBB1 = 15 Ω; VBB1 = 38.5 Vdc; RBB2 = 50 Ω; VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH Clamped Inductive Load TA = +250C; duty cycle ≤ 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 µH (See Figure 5 of MIL-PRF-19500/525) Clamped Voltage = 350 Vdc 2N6546 Clamped Voltage = 450 Vdc 2N6547 3.) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6.


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