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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525 Devices
www.DataSheet4U.com
Qualified Level 2N6547 JAN JANTX JANTXV
2N6546
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCEX VEBO IB IC PT Top, Tstg Symbol
2N6546 300 600
2N6547 400 850
Units
Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
*See Appendix A for Package Outline
@ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Temperature Range
8 10 15 175 100 -65 to +200
TO-3 (TO-204AA)*
THERMAL CHARACTERISTICS
Max. 1.0 RθJC 1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C Characteristics Thermal Resistance, Junction-to-Case
0
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 600 Vdc; VBE = 1.5 Vdc VCE = 850 Vdc; VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 8 Vdc 2N6546 2N6547 2N6546 2N6547 V(BR)CEO 300 400 1.0 1.0 1.0 Vdc
ICEX IEBO
mAdc mAdc
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120101 Page 1 of 2
2N6546, 2N6547 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 1 Adc; VCE = 2 Vdc IC = 5 Adc; VCE = 2 Vdc IC = 10 Adc; VCE = 2 Vdc Base-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc Collector-Emitter Saturated Voltage www.DataSheet4U.com IB = 2.0 Adc; IC = 10 Adc IB = 3.0 Adc; IC = 15 Adc hFE 15 12 6
60 Vdc Vdc
VBE(sat) VCE(sat)
1.6 1.5 5.0
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz
hfe
6.0 Cobo 30 500 1.0 4.7 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc Turn-Off Time VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
t
on
µs µs
t
off
SAFE OPERATING AREA
DC Tests TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525) Test 1 VCE = 11.7 Vdc; IC = 15 Adc Test 2 VCE = 20 Vdc; IC = 8.75 Adc Test 3 VCE = 250 Vdc; IC = 45 mAdc 2N6546 VCE = 350 Vdc; IC = 30 mAdc 2N6547 Unclamped Inductive lOAD TC = +250C; duty cycle ≤ 10%; RS = 0.1 Ω; tr = tf ≤ 500 ηs (See Figure 4 of MIL-PRF-19500/525) Test 1 Tp = 5 ms; (vary to obtain IC); RBB1 = 15 Ω; VBB1 = 38.5 Vdc; RBB2 = 50 Ω; VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 µH Test 2 Tp = 5 ms; (vary to obtain IC); RBB1 = 15 Ω; VBB1 = 38.5 Vdc; RBB2 = 50 Ω; VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH Clamped Inductive Load TA = +250C; duty cycle ≤ 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 µH (See Figure 5 of MIL-PRF-19500/525) Clamped Voltage = 350 Vdc 2N6546 Clamped Voltage = 450 Vdc 2N6547 3.) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6.