AP9435GK

AP9435GK Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching www.DataSheet4U.com P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-223 G D BVDSS RDS(ON) ID -30V 50mΩ -6A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating -30 ± 25 -6 -4.8 -20 2.7 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 45 Unit ℃/W Data and specifications subject to change without notice 200708031 AP9435GK Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.02 50 100 -3 -1 -25 ±100 16 912 - V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A 10 9.2 2.8 5.2 11 8 25 17 507 222 158 VGS(th) www.DataShe...