N-CHANNEL MOSFET
AP9452GG
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower gate charge ▼ Capable of 2.5V gate drive ▼ Si...
Description
AP9452GG
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower gate charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
20V 50mΩ 4A
G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D
S
SOT-89
D G
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 ±16 4 2.5 12 1.25 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 100
Unit ℃/W
Data and specifications subject to change without notice
201224031
AP9452GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 20 0.7 -
Typ. 0.03 10 6 1 2 8 9 13 3 360 80 65
Max. Units 38 50 80 1.5 1 25 ±100 10 570 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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Static Drain-Source O...
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