N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9478M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS R...
Description
AP9478M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G
60V 64mΩ 4.8A
▼ Lower Gate Charge ▼ Fast www.DataSheet4U.com Switching Characteristic
D
D D
SO-8
S
S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 60 ±25 4.8 3.8 30 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
200614041
AP9478M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 60 1 -
Typ. 0.06 6 9 2 5 8 6 20 4 710 80 51 2.1
Max. Units 64 72 3 1 25 ±100 15 1140 V V/℃ mΩ mΩ V S uA uA nA...
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