N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926EM-A
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive
D1 D2 D1 D2
N-CHANNEL ENH...
Description
AP9926EM-A
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive
D1 D2 D1 D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G2 S2
16V 27mΩ 7A
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▼ Surface mount package
SO-8
S1 G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 G1 G2 D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 16 ±12 7 5.6 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
201112041
AP9926EM-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 16 0.01 13 14 1.4 7 10 13 26 8 420 280 120 3 27 40 1.2 1 25 ±10 22 670 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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VGS=4.5V, ID=6A...
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