N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926GO
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Lo...
Description
AP9926GO
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low www.DataSheet4U.com drive current ▼ Surface mount package
D2 S2 G2 S2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
S1 D1 G1 S1
20V 28mΩ 4.6A
TSSOP-8
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 20 ±8 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 125
Unit ℃/W
Data and specifications subject to change without notice
20071902
AP9926GO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 23 9.7 12.5 1 6.5 7 14.5 19 12 355 190 85
Max. Units 28 40 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
...
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