N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926M
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low www.DataSheet4U.com dri...
Description
AP9926M
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low www.DataSheet4U.com drive current
G2 S2 D2 D1 D1 D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 30mΩ 6A
▼ Surface mount package
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1,2 3 3
Rating 20 ± 12 6 4.8 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
20020426
AP9926M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 15.6 12.5 1 6.5 7 14.5 19 12 355 190 85
Max. Units 30 45 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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Static Dra...
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