AP9985M

AP9985M Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface www.DataSheet4U.com Mount Package D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 40V 15mΩ 10A ID SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 10 8 48 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 200120031 AP9985M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.032 Max. Units 15 25 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) www.DataSheet4U.com Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=10A 35 14.7 7.1 6.8 1...