POWER MOSFET
AP9985M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface www.DataSheet4U.com Mount...
Description
AP9985M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface www.DataSheet4U.com Mount Package
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
40V 15mΩ 10A
ID
SO-8
S S
S
Description
D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ± 20 10 8 48 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
200120031
AP9985M
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 40 1 -
Typ. 0.032
Max. Units 15 25 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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Static Drain-Source On-Resistance
VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=10A
35 14.7 7.1 6.8 1...
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