Document
AP9973H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80mΩ 14A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9973J) are available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 60 ±20 14 9 40 27 0.22 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
2001023031
AP9973H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 60 1 -
Typ. 0.05 8.6 8 3 4 7 15 16 3 720 77 45
Max. Units 80 100 3 1 25 ±100 13 1150 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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Static Drain-Source On-Resistance
VGS=10V, ID=9A VGS=4.5V, ID=6A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS= ± 20V ID=9A VDS=48V VGS=4.5V VDS=30V ID=9A RG=3.3Ω,VGS=10V RD=3.3Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=14A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 28 27
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%.
AP9973H/J
45
32
40
o T C =25 C
35
ID , Drain Current (A)
30
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V
28
T C =150 o C
24
10V 7.0V 5.0V 4.5V
20
25
16
20
12
15
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8
V G =3.0V
10
V G =3.0V
4
5
0
0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
2.5
ID=9A
85
I D =9A
2.0
T C =25 C Normalized RDS(ON)
o
V G =10V
RDS(ON) (mΩ )
80
1.5
75
1.0
70
0.5
65
0.0 3 5 7 9 11
-50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.5
14
12 2
10
8
IS(A)
o T j =150 C
6
T j =25 o C
VGS(th) (V)
1.4
1.5
1
4
0.5 2
0 0 0.2 0.4 0.6 0.8 1 1.2
0
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP9973H/J
f=1.0MHz
12
10000
ID=9A VGS , Gate to Source Voltage (V)
10
8
6
4
C (pF)
V DS =48V V DS =38V V DS =30V
1000
Ciss
100
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Coss Crss
2
0
10 0 4 8 12 16 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thjc)
Duty factor=0.5
1ms
10
0.2
ID (A)
0.1
0.1
0.05
10ms
1
PDM
0.02
T C =25 o C Single Pulse
0.1 0.1 1 10
100ms 1s DC
t T
Single Pulse
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
.