Document
AP9962GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
40V 20mΩ 32A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9962GJ) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 40 ±20 32 20 150 34.7 0.27 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
201028031
AP9962GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 40 1 -
Typ. 0.1 19 13 5 8 8 38 20 5 180 115
Max. Units 20 30 3 1 25 ±100 21 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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VGS=10V, ID=20A VGS=4.5V, ID=16A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= ± 20V ID=20A VDS=32V VGS=4.5V VDS=20V ID=20A RG=3.3Ω,VGS=10V RD=1.0Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
1170 1870
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=32A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 24 14
Max. Units 1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%.
AP9962GH/J
140
120
120
T C =25 o C
10V 8.0V ID , Drain Current (A)
T C =150 C
100
o
10V 8.0V
100
ID , Drain Current (A)
6.0V
80
80
6.0V
60
60
4.5V
40
4.5V
40
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20
20
V G =3.0V
0 0 1 2 3 4 5 6 7 8 0 1 2 3 4
V G =3.0V
0
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
36
1.8
I D =20A
32
T C =25 o C Normalized RDS(ON)
1.6
I D =20A V G =10V
28
1.4
RDS(ON) (mΩ )
24
1.2
20
1.0
16
0.8
12
0.6 3 4 5 6 7 8 9 10 11 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.4
30
2.2 25
2 20
15
o T j =150 C
10
VGS(th) (V)
1.4
1.8
IS(A)
T j =25 o C
1.6
1.4
5 1.2
0 0 0.2 0.4 0.6 0.8 1 1.2
1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP9962GH/J
f=1.0MHz
14
10000
I D =20A
12
VGS , Gate to Source Voltage (V)
V DS =20V
10
V DS =25V V DS =32V C (pF)
1000
Ciss
8
6
Coss
100
Crss
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4
2
0 0 5 10 15 20 25 30
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
100us 1ms ID (A)
10
0.2
0.1
0.1
0.05
10ms 100ms 1s DC
PDM
0.02
t T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
1
T C =25 C Single Pulse
o
0.01
Single Pulse
0.1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
.