Document
PROCESS
CP645
Power Transistor
PNP, 8.0A Power Transistor Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area
www.DataSheet4U.com
MULTIEPITAXIAL MESA 120 x 145 MILS 13 MILS 20 x 45 MILS 14 x 70 MILS Al - 50,000Å Cr / Ni / Ag - 10,000Å
Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY GROSS DIE PER 4 INCH WAFER 640 PRINCIPAL DEVICE TYPES MJE15031
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (4- April 2005)
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