S9012
PNP General Purpose Transistors
P b Lead(Pb)-Free
www.DataSheet4U.com
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
...
S9012
PNP General Purpose
Transistors
P b Lead(Pb)-Free
www.DataSheet4U.com
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PCM Tj Tstg Value -25 -40 -5 -500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= -20 Vdc, IB =0) Collector Cutoff Current (VCB= -40 Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0V d c, IC =0)
Symbol
V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO
Min
-25 -40 -5 -
Max
-0.1 -0.1 -0.1
Unit
Vdc Vdc Vdc uAdc uAdc uAdc
WEITRON
http://www.weitron.com.tw
S9012
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min
WE IT R ON
Max Unit
On Characteristics
DC Current Gain
(IC= -50 mAdc, VCE= -1Vdc)
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(IC= -500 mAdc, VCE= -1Vdc)
hFE(1) hFE(2)
64 40
300 -
-
Collector-Emitter Saturation Voltage
(IC= 500 mAdc, IB= -50 mAdc)
VCE(sat)
-
-0.6
Vdc
Base-Emitter Saturation Voltage
(IC= 500 mAdc, IB= -50 mAdc)
VBE(sat)
-
-1.2
Vdc
Transition frequency
fT
150
-
MHz
Classification Of h FE(1)
Rank Range D 64-91 E 78-112 F 96-135 G...