POWER MOS 7 IGBT
TYPICAL PERFORMANCE CURVES ®
APT35GP120B2DQ2 APT35GP120B2DQ2G*
APT35GP120B2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb...
Description
TYPICAL PERFORMANCE CURVES ®
APT35GP120B2DQ2 APT35GP120B2DQ2G*
APT35GP120B2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
T-Max®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff RBSOA Rated
G
C
E
C G E
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MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT35GP120B2DQ2(G) UNIT Volts
1200 ±30 96 46 140 140A @ 960V 543 -55 to 150 300
Amps
Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units
1200 3 4.5 3.3 3 350
2 2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 12...
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