TRANSISTOR. 2SA1585E Datasheet

2SA1585E TRANSISTOR. Datasheet pdf. Equivalent

Part 2SA1585E
Description TRANSISTOR
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA.
Manufacture Jiangsu Changjiang Electronics
Datasheet
Download 2SA1585E Datasheet



2SA1585E
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
2SA1585E TRANSISTOR
DESCRIPTION
PNP Epitaxial planar type Silicon Transistor
www.DataShFeEetA4UT.UcoRmES
Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
C
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
MARKING:AEQ, AER, AES
C
AEQ
BE
MAXIMUM RATINGS TA=25unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
-20
-20
-6
-2
150
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
fT
Cobo
Test conditions
IC= -50µA , IE=0
IC= -1mA , IB=0
IE=- 50µA, IC=0
VCB=-20V , IE=0
VEB= -5V , IC=0
VCE=-2 V, IC= -0.1A
IC= -2A, IB=-0.1A
VCE=-2V, IC=-0.5A
f=100MHz
VCB=-10V,IE=0,f=1MHz
MIN
-20
-20
-6
120
TYP
240
35
Units
V
V
V
A
mW
MAX
-0.1
-0.1
560
-0.5
UNIT
V
V
V
µA
µA
V
MHz
pF



2SA1585E
CLASSIFICATION OF hFE
Rank
Range
Q
120-270
Typical Characteristics
R
180-390
S
270-560
2SA1585E
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