N64T1630C1B

NanoAmp Solutions, Inc. 670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N64T1630C1B Advance Information 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M × 16 Bits Overview The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be compatible in operation and www.DataSheet4U.com interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device includes a ZZ input for deep sleep as well as several other power saving modes: Partial Array Self Refresh mode where data is retained in a portion of the array and Temperature Compensated Refresh. Both these modes reduce standby current drain. The N64T1630C1B can be operated in a standard asynchronous mode and data can also be read in a 4-word page mode for fast access times. The die has separate power rails, VccQ and VssQ for the I/O to be run from a separate power supply from the device core. Features Dual voltage rails for optimum power & performance Vcc - 2.7V - 3.3V Vccq - 2.7V to 3.3V Fast Cycle Times TACC < 70 nS (60ns future) TPACC < 25 nS Very low standby current ISB < 170µA Very low operating current Icc < 25mA PASR (Partial Array Self Refresh) TCR (Temperature Compensated Refresh) Table 1: Product Family Part Numb...