POWER TRANSISTORS. BD243C Datasheet

BD243C TRANSISTORS. Datasheet pdf. Equivalent

Part BD243C
Description NPN SILICON POWER TRANSISTORS
Feature BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary U.
Manufacture Bourns Electronic Solutions
Datasheet
Download BD243C Datasheet



BD243C
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD244 Series
65 W at 25°C Case Temperature
6 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
www.DataSheet4U.com
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 )
Collector-emitter voltage (IC = 30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD243
BD243A
BD243B
BD243C
BD243
BD243A
BD243B
BD243C
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
55
70
90
115
45
60
80
100
5
6
10
3
65
2
62.5
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1



BD243C
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
(see Note 5)
VCE = 55 V
ICES
Collector-emitter
cut-off current
VCE = 70 V
VCE = 90 V
VCE = 115 V
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
w w w . D a t aEmSittehr cuet-oeff t 4 U . c o m
IEBO current
VEB = 5 V
hFE
VCE(sat)
Forward current
transfer ratio
Collector-emitter
saturation voltage
VCE = 4 V
VCE = 4 V
IB = 1 A
Base-emitter
VBE voltage
VCE = 4 V
Small signal forward
hfe current transfer ratio VCE = 10 V
|hfe|
Small signal forward
current transfer ratio
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 0.3 A
IC = 3 A
IC = 6 A
IC = 6 A
IC = 0.5 A
IC = 0.5 A
BD243
BD243A
BD243B
BD243C
BD243
BD243A
BD243B
BD243C
BD243/243A
BD243B/243C
45
60
80
100
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
30
15
20
3
0.4
0.4
0.4
0.4
0.7
0.7
1
1.5
2
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.92 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20
IB(off) = -0.1 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3 µs
1 µs
PRODUCT INFORMATION
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.





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