HIGH-SPEED THYRISTOR SILICON PLANAR TYPE
SH8G41
TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE
SH8G41
FOR AUTOMATIC−STROBE FLASHER APPLICATIONS −−− DISCHARGER...
Description
SH8G41
TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE
SH8G41
FOR AUTOMATIC−STROBE FLASHER APPLICATIONS −−− DISCHARGER (Chopper)
l Type No. SH8G41 is Designed for a Small Package Device Having ShortedTurn−Off Time and Low Turn−On Loss at High Current. l Repetitive Peak Off−State Voltage and Peak Reverse Voltage : VDRM = VRRM = 400V Unit: mm
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l Repetitive Peak Surge On−State Current : ITRM = 350A l Critical Rate of Rise of On−State Current : di/dt = 100A/µs l Plastic Mold Package
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State and Reverse Voltage Non−Repetitive Peak Reverse Voltage (Note 1) Repetitive Peak Surge On−State Current (Note 2) Critical Rate of Rise of On−State Current (Note 3) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM VRRM VRSM ITRM di /dt PGM PG (AV) IGM Tj Tstg RATING 400 450 350 100 5 0.5 2 −40~125 −40~125 UNIT V V A A / µs W W A °C °C
JEDEC JEITA TOSHIBA Weight: 2.0g
TO−220AB ― 13−10G1B
Note 1: Note 2: Note 3:
Non − Rep. < 5ms, Tj = 0~125°C CM = 1000µF iG = 100mA tgw = 10µs tgr ≤ 250ns
1
2001-07-10
SH8G41
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State and Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Holding Current Commutating Capacitor www.DataSheet4U.com Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD IH Cc Rth (j−a) TEST CON...
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