2SC2073A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2073A
Power Amplifier Applications Vertic...
2SC2073A
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT Process)
2SC2073A
Power Amplifier Applications Vertical Output Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 150 V
Collector-emitter voltage
VCEO 150 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1.5 A
Base current
IB 0.5 A
Collector power dissipation
Junction temperature
Ta = 25°C Tc = 25°C
PC Tj
2.0 W
25 150 °C
1.Base 2.Collector 3.Emitter
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA TOSHIBA
SC-67 2-10R1A
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
Weight: 1.7 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-11-26
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
ICBO IEBO hFE VCE...