STP8NS25FP

N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE STP8NS25 STP8NS25FP s s s STP8NS25 STP8NS25FP VDSS 250 V 250 V RDS(on) < 0.45 Ω < 0.45 Ω ID 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 2 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter STP8NS25 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX (*)Limited only by maximum temperature allowed Value STP8NS25FP 250 250 ± 20 8 5 32 80 0.64 5 2000 8(*) 5(*) 32(*) 30 0.24 Unit V V V A A A W W/°C V/ns V °C °C ()Pulse width limit...