D-S MOSFET. AF4502C Datasheet

AF4502C MOSFET. Datasheet pdf. Equivalent

Part AF4502C
Description P & N-Channel 30-V (D-S) MOSFET
Feature AF4502C P & N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends.
Manufacture Anachip
Datasheet
Download AF4502C Datasheet



AF4502C
P & N-Channel 30-V (D-S) MOSFET
AF4502C
Features
General Description
-Low rDS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
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These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
VDS (V)
30
-30
rDS(on) (m)
20@VGS=4.5V
13.5@VGS=10V
30@VGS=-4.5V
19@VGS=-10V
ID (A)
8.4
10.0
-6.8
-8.5
Pin Assignments
S1 1
G1 2
S2 3
G2 4
SOP-8
8 D1
7 D1
6 D2
5 D2
Pin Descriptions
Pin Name
S1
G1
D1
S2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
Ordering information
A X 4502C X X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8



AF4502C
P & N-Channel 30-V (D-S) MOSFET
AF4502C
Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
VDS
VGS
ID
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IDM
IS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TA=25ºC
TA=70ºC
Continuous Source Current (Diode Conduction) (Note 1)
Power Dissipation (Note 1)
TA=25ºC
TA=70ºC
Operating Junction and Storage Temperature Range
N-Channel
30
20
10
8.1
±50
2.3
2.1
1.3
-
P-Channel
-30
-25
-8.5
-6.8
±50
-2.1
2.1
1.3
-55 to 150
Units
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
Parameter
RθJC Maximum Junction-to-Case (Note 1)
RθJA Maximum Junction-to-Ambient (Note 1)
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
t < 5 sec
t < 5 sec
Specifications (TA=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Static
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 3)
Drain-Source On-Resistance
(Note 3)
Forward Tranconductance
(Note 3)
VGS=0V, ID=250uA
VGS=0V, ID=-250uA
VDS= VGS, ID=250uA
VDS= VGS, ID=-250uA
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VDS=24V, VGS=0V
VDS=-24V, VGS=0V
VDS=5V, VGS=10V
VDS=-5V, VGS=-10V
VGS=10V, ID=10A
VGS=4.5V, ID=8.4A
VGS=-10V, ID=-8.5A
VGS=-4.5V, ID=-6.8A
VDS=15V, ID=10A
VDS=-15V, ID=-9.5A
Ch
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Maximum
40
60
Units
ºC/W
ºC/W
Limits
Min. Typ.
Max.
Unit
30 -
-30 -
-
-
V
1 1.95
-1.0 -1.6
3
-3
V
-
-
-
-
±100
±100
nA
-
-
-
-
1
-1
uA
20 -
-50 -
-
-
A
- 11 13.5
-
-
15
16
20
19
m
- 26 30
- 40 -
- 31 -
S
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
2/8





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