HEXFET Power MOSFET
PD - 97106
IRFP4321PbF
Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l...
Description
PD - 97106
IRFP4321PbF
Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance www.DataSheet4U.com l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA
HEXFET® Power MOSFET
VDSS RDS(on) typ. max. ID
D
150V 12m: 15.5m: 78A
D
G S
G
D
S
TO-247AC
D S
G
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
78 c 55 330 310 2.0 ±30 210 -55 to + 175 300 10lbxin (1.1Nxm) Typ. ––– 0.24 ––– Max. 0.49 ––– 40
Units
A
W W/°C V mJ °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case g Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g Units °C/W
www.irf.com
1
6/23/06
IRFP4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
150 ––– ––– 3.0 ––– ––– ––– –...
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