Document
PD - 97123A
IRFP4310ZPbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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D
G S
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
100V 4.8m: 6.0m: 134A c 120A
Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
G
D
S
TO-247AC
G D S
G ate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
134c 95 120 560 280 1.9 ± 20 18 -55 to + 175 300 10lbxin (1.1Nxm) 130 See Fig. 14, 15, 22a, 22b,
Units
A
W W/°C V V/ns °C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy g mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA
Parameter
Junction-to-Case j Case-to-Sink, Flat Greased Surface Junction-to-Ambient j
Typ.
––– 0.24 –––
Max.
0.54 ––– 40
Units
°C/W
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1
3/8/08
IRFP4310ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
100 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– 0.11 4.8 ––– ––– ––– ––– ––– 0.7 ––– ––– 6.0 4.0 20 250 100 -100 –––
Conditions
V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 5mAd mΩ VGS = 10V, ID = 75A g V VDS = VGS, ID = 150μA μA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω
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TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
––– 120 29 35 85 20 60 55 57 6860 490 220 570 920 ––– 170 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Conditions
VDS = 50V, ID = 75A ID = 75A VDS =50V VGS = 10V g ID = 75A, VDS =0V, VGS = 10V VDD = 65V ID = 75A RG = 2.7Ω VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 80V i, See Fig. 11 VGS = 0V, VDS = 0V to 80V h
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd)
150 ––– ––– ––– ––– Turn-On Delay Time ––– Rise Time ––– Turn-Off Delay Time ––– Fall Time ––– Input Capacitance ––– Output Capacitance ––– Reverse Transfer Capacitance ––– Effective Output Capacitance (Energy Related) ––– Effective Output Capacitance (Time Related)h –––
ns
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– 134c ––– 560 A A
Conditions
MOSFET symbol showing the integral reverse
D
G S
––– ––– 1.3 V ––– 40 ns ––– 49 ––– 58 nC TJ = 125°C ––– 89 ––– 2.5 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V g TJ = 25°C VR = 85V, IF = 75A TJ = 125°C di/dt = 100A/μs g TJ = 25°C
Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.047mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above the Eas value and test conditions. ISD ≤ 75A, di/dt ≤ 600A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Rθ is measured at TJ approximately 90°C
Coss while VDS is rising from 0 to 80% VDSS.
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IRFP4310ZPbF
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V ≤ .