STP16NE06FP. P16NE06FP Datasheet

P16NE06FP STP16NE06FP. Datasheet pdf. Equivalent

Part P16NE06FP
Description STP16NE06FP
Feature ® STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET PR.
Manufacture STMicroelectronics
Datasheet
Download P16NE06FP Datasheet



P16NE06FP
STP16NE06
® STP16NE06FP
N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NE06
www.DataSheet4U.ScoTmP16NE06FP
60 V
60 V
< 0.100
< 0.100
16 A
11 A
s TYPICAL RDS(on) = 0.08
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
PRELIMINARY DATA
3
2
1
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
June 1998
Value
Unit
STP16NE06 STP16NE06FP
60 V
60 V
± 20
V
16 11 A
10 7 A
64 64 A
60 30 W
0.4 0.2 W/oC
2000
V
6
-65 to 175
175
(1) ISD 16 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/9



P16NE06FP
STP16NE06/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
TO-220FP
2.5 5
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
www.DataSheet4U.coSmymbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
16
80
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
1 µA
10 µA
± 100 nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 8 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
Max.
4
Unit
V
0.080 0.100
16 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =8 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
6
Max.
Unit
S
760 1000
100 140
30 45
pF
pF
pF
2/9





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