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STP16NE06 STP16NE06FP
N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP16NE06 STP16NE06FP www.DataSheet4U.com
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.100 Ω < 0.100 Ω
ID 16 A 11 A
TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
1 2
3
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
s
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( • ) P tot V ISO dV/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 16 10 64 60 0.4 6 -65 to 175 175
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Value STP16NE06 STP16NE06FP 60 60 ± 20 11 7 64 30 0.2 2000
Unit V V V A A A W
o W/ C
V V/ns
o o
C C
(•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 ’
June 1998
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THERMAL DATA
TO-220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 2.5 62.5 0.5 300 TO-220FP 5
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
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Symbol I AR E AS
Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V)
Max Value 16 80
Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = ± 20 V
T c = 125
I GSS
ON (∗)
Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V Test Conditions ID = 250 µ A ID = 8 A 16 Min. 2 Typ. 3 0.080 Max. 4 0.100 Unit V Ω A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D =8 A V GS = 0 Min. Typ. 6 760 100 30 1000 140 45 Max. Unit S pF pF pF
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STP16NE06/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V R G =4.7 W V DD = 40 V ID = 8 A V GS = 10 V I D = 16 A VGS = 10 V Min. Typ. 10 35 20 5 7 Max. 80 40 30 Unit ns ns nC nC nC
www.DataSheet4U.com SWITCHING OFF
Symbol t r(Voff) tf tc
Parameter Off-voltage Rise Time Fall Time Cross-over Time
Test Conditions V DD = 48 V I D = 16 A R G =4.7 Ω V GS = 10 V
Min.
Typ. 7 18 30
Max. 10 25 45
Unit ns ns ns
SOURCE DRAIN DIODE
Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A I SD = 16 A V DD = 30 V VGS = 0 di/dt = 100 A/ µ s o T j = 150 C 70 0.21 6 Test Conditions Min. Typ. Max. 16 64 1.5 Unit A A V ns µC A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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Thermal Impedance for TO-220 Thermal Impedance for TO-220FP
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Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP16NE06/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
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Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And.