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P16NE06FP Dataheets PDF



Part Number P16NE06FP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP16NE06FP
Datasheet P16NE06FP DatasheetP16NE06FP Datasheet (PDF)

® STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP16NE06 STP16NE06FP www.DataSheet4U.com s s s s s s V DSS 60 V 60 V R DS(on) < 0.100 Ω < 0.100 Ω ID 16 A 11 A TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ".

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® STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP16NE06 STP16NE06FP www.DataSheet4U.com s s s s s s V DSS 60 V 60 V R DS(on) < 0.100 Ω < 0.100 Ω ID 16 A 11 A TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION s TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot V ISO dV/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 16 10 64 60 0.4  6 -65 to 175 175 (1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP16NE06 STP16NE06FP 60 60 ± 20 11 7 64 30 0.2 2000 Unit V V V A A A W o W/ C V V/ns o o C C (•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 ’ June 1998 1/9 STP16NE06/FP THERMAL DATA TO-220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 2.5 62.5 0.5 300 TO-220FP 5 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS www.DataSheet4U.com Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) Max Value 16 80 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 60 1 10 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 I GSS ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V Test Conditions ID = 250 µ A ID = 8 A 16 Min. 2 Typ. 3 0.080 Max. 4 0.100 Unit V Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D =8 A V GS = 0 Min. Typ. 6 760 100 30 1000 140 45 Max. Unit S pF pF pF 2/9 STP16NE06/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V R G =4.7 W V DD = 40 V ID = 8 A V GS = 10 V I D = 16 A VGS = 10 V Min. Typ. 10 35 20 5 7 Max. 80 40 30 Unit ns ns nC nC nC www.DataSheet4U.com SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 48 V I D = 16 A R G =4.7 Ω V GS = 10 V Min. Typ. 7 18 30 Max. 10 25 45 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A I SD = 16 A V DD = 30 V VGS = 0 di/dt = 100 A/ µ s o T j = 150 C 70 0.21 6 Test Conditions Min. Typ. Max. 16 64 1.5 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP16NE06/FP Thermal Impedance for TO-220 Thermal Impedance for TO-220FP www.DataSheet4U.com Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP16NE06/FP Gate Charge vs Gate-source Voltage Capacitance Variations www.DataSheet4U.com Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP16NE06/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform www.DataSheet4U.com Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And.


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