900V N-Channel MOSFET
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
FQP4N90C / FQPF4N90C
N-Channel QFET® MOSFET
900 V, 4.0 A, 4.2 Ω
December...
Description
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
FQP4N90C / FQPF4N90C
N-Channel QFET® MOSFET
900 V, 4.0 A, 4.2 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A
Low Gate Charge (Typ. 17 nC)
Low Crss (Typ. 5.6 pF)
100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Parameter Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100...
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