2SD1910. D1910 Datasheet

D1910 Datasheet PDF, Equivalent


Part Number

D1910

Description

2SD1910

Manufacture

Wing Shing Electronic

Total Page 1 Pages
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Download D1910 Datasheet PDF


D1910 Datasheet
2SD1910
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
www.DataSheet4U.com
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-3PFM
Tmb 25
IC = 3.0A; IB = 0.8A
f = 16KHz
IF = 3.0A
ICsat = 3.0A; f = 16KHz
TYP MAX UNIT
- 1500 V
- 600 V
- 3A
- 6A
- 40 W
- 5V
-A
1.6 2.0
V
1.0 s
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
-
1500
V
- 600 V
- 3A
- 6A
-A
-A
- 40 W
-65 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 3.0A; IB = 0.8A
IC = 3.0A; IB = 0.8A
IC = 300mA; VCE = 5V
IF = 3.0A
IC = 0.1A; VCE = 10V
VCB = 10V
IC=3A,IB(end)=0.8A,VCC=105V
IC=3A,IB(end)=0.8A,VCC=105V
TYP MAX UNIT
- 1.0 mA
- 2.5 mA
-V
- 5V
- 1.5 V
8
1.6 2.0
V
3 - MHz
90 - pF
-s
0.7 1.0
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com


Features Datasheet pdf 2SD1910 GENERAL DESCRIPTION Silicon Dif fused Power Transistor Highvoltage,hig h-speed switching npn transistors in a plastic envelope with integrated effici ency diode,primarily for use in horizon tal deflection circuites of colour tele vision receivers QUICK REFERENCE DATA www.DataSheet4U.com TO-3PFM CONDITIONS VBE = 0V TYP SYMBOL VCESM VCEO IC IC M Ptot VCEsat Icsat VF tf PARAMETER Co llector-emitter voltage peak value Coll ector-emitter voltage (open base) Colle ctor current (DC) Collector current pea k value Total power dissipation Collect or-emitter saturation voltage Collector saturation current Diode forward volta ge Fall time Tmb 25 IC = 3.0A; IB = 0. 8A f = 16KHz IF = 3.0A ICsat = 3.0A; f = 16KHz 1.6 MAX 1500 600 3 6 40 5 2.0 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emit ter voltage peak value Collector-emitte r voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base curre.
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