K3767

www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum www.DataSheet4U.com Ratings (Ta = 25°C) Characteristics Symbol VDSS VDGR VGSS DC Pulse (Note 1) (Note 1) ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 25 93 2 Unit V V V A W mJ A 1: Gate 2: Drain 3: Source Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DataShee JEDEC JEITA TOSHIBA ― SC-67 2-10U1B DataSheet4U.com 4 mJ 150 -55~150 °C °C Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 5.0 62.5 Unit °C/W °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150℃. 1 Note 2: VDD = 90 V, Tch = 25°C（initial））, L = 41mH, RG = 25 Ω , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 DataSheet4U.com 1 DataSheet 4 U .com 200...