N-Channel MOSFET. 2SK3846 Datasheet

2SK3846 MOSFET. Datasheet pdf. Equivalent

Part 2SK3846
Description N-Channel MOSFET
Feature 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3846 Switching Reg.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3846 Datasheet



2SK3846
2SK3846
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (UMOSIII)
2SK3846
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 12 m(typ.)
z High forward transfer admittance : |Yfs| = 33 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V)
www.DataSheetz4U.cEonmhancement mode : Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Drain–gate voltage (RGS = 20 k)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
26
78
25
63
26
2.5
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch–c)
Rth (ch–a)
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 97 µH, IAR = 26 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-09-27



2SK3846
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drain–source breakdown voltage
Gate threshold voltage
Drain–source ON resistance
Forward transfer admittance
www.DataSheet4U.com
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 40 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = 20 V
VDS = 10 V, ID = 1 mA
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 13 A
VDS = 10 V, ID = 13 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
Switching time
Turn–on time
Fall time
Turn–off time
Total gate charge
(gate–source plus gate–drain)
Gate–source charge
Gate–drain (“Miller”) Charge
tr
VGS 10 V
0V
ID = 13 A
VOUT
ton
tf
VDD ∼− 20 V
toff Duty <= 1%, tw = 10 μs
Qg
Qgs VDD 32 V, VGS = 10 V, ID = 26 A
Qgd
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 26 A, VGS = 0 V
IDR = 26 A, VGS = 0 V
dIDR / dt = 50 A / μs
Marking
2SK3846
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
40 — —
15 — —
V
1.5 — 2.5
V
— 19 26
m
— 12 16
16 33 —
S
— 1980 —
— 210 —
pF
— 300 —
—7—
— 22 —
ns
— 10 —
— 60 —
— 40 —
— 28 — nC
— 12 —
Min Typ. Max Unit
— — 26 A
— — 78 A
— — 1.5 V
— 40 — ns
— 24 — nC
K3846
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-09-27





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