Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed sw...
Power
Transistors
2SC3795, 2SC3795A
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
I Features
10.0±0.2
4.2±0.2
High-speed switching
5.5±0.2
2.7±0.2
High collector to base voltage VCBO
Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
/ Collector to base 2SC3795
VCBO
14.0±0.5 Solder Dip
(4.0)
800
V
voltage
2SC3795A
900
e e) Collector to
2SC3795
VCES
800
V
c typ emitter voltage 2SC3795A
900
n d tage. ued Collector to emitter voltage
VCEO
500
V
le s ntin Emitter to base voltage
VEBO
8
V
a e cyc isco Peak collector current
ICP
10
A
life d, d Collector current
IC
5
A
n u duct type Base current
IB
3
A
te tin Pro ed Collector power TC = 25°C
PC
40
W
ur tinu dissipation
Ta = 25°C
2
g fo con Junction temperature
Tj
150
°C
win dis Storage temperature
Tstg
−55 to +150
°C
in n follo ned I Electrical Characteristics TC = 25°C
des , pla Parameter
Symbol
Conditions
a o inclu type Collector cutoff c ed ce current
2SC3795 2SC3795A
tinu nan Emitter cutoff current
M is con inte Collector to emitter voltage *
/Dis ma Forward current transfer ratio
D tenancece type, Collector to emitter saturation voltage
in an Base to emitter saturation voltage
Ma inten Transition frequency
ma Turn-on ti...
