IDT6168LA70DB. 6168LA70DB Datasheet

6168LA70DB IDT6168LA70DB. Datasheet pdf. Equivalent

Part 6168LA70DB
Description IDT6168LA70DB
Feature CMOS Static RAM 16K (4K x 4-Bit) Features IDT6168SA IDT6168LA High-speed (equal access and cycle t.
Manufacture IDT
Datasheet
Download 6168LA70DB Datasheet



6168LA70DB
CMOS Static RAM
16K (4K x 4-Bit)
IDT6168SA
IDT6168LA
Features
x High-speed (equal access and cycle time)
– Military: 25/45ns (max.)
– Industrial: 25ns (max.)
– Commercial: 15/20/25ns (max.)
x Low power consumption
x Battery backup operation—2V data retention voltage
www.DataSheet4U(.IcDoTm6168LA only)
x Available in high-density 20-pin ceramic or plastic DIP and
20-pin leadless chip carrier (LCC)
x Produced with advanced CMOS high-performance
technology
x CMOS process virtually eliminates alpha particle
soft-error rates
x Bidirectional data input and output
x Military product compliant to MIL-STD-883, Class B
Description
The IDT6168 is a 16,384-bit high-speed static RAM organized
as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective approach for
high-speed memory applications.
Access times as fast 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby mode as long as CS remains
HIGH. This capability provides significant system-level power and cooling
savings. The low-power (LA) version also offers a battery backup data
retention capability where the circuit typically consumes only 1µW
operating off a 2V battery. All inputs and outputs of the IDT6168 are
TTL-compatible and operate from a single 5V supply.
The IDT6168 is packaged in either a space saving 20-pin, 300-mil
ceramic or plastic DIP or a 20-pin LCC providing high board-level
packing densities.
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level of
performance and reliability.
Functional Block Diagram
A0
ADDRESS
DECODER
16,384-BIT
MEMORY ARRAY
VCC
GND
A11
I/O0
I/O CONTROL
I/O1
INPUT
DATA
I/O2 CONTROL
I/O3
,
CS
WE
©2000 Integrated Device Technology, Inc.
1
3090 drw 01
FEBRUARY 2001
DSC-3090/05



6168LA70DB
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Pin Configurations
Military, Industrial, and Co mmercial Temperature Ranges
Truth Table(1)
Mode
CS WE Output
Power
A0
A1
A2
A3
A4
A5
A6
A7
www.DataSheet4U.com CS
GND
1 20 VCC
2 19 A11
3 18 A10
4 P20-1 17 A9
5
D20-1
L20-1
16 A8
6 15 I/O3
7 14 I/O2
8 13 I/O1
9 12 I/O0
,10 11 WE
3090 drw 02
DIP/LCC
Top View
Standby
Read
Write
HX
LH
LL
NOTE:
1. H = VIH, L = VIL, X = Don't Care
High-Z
DOUT
DIN
Standby
Active
Active
3090 tbl 03
Absolute Maximum Ratings(1)
Symbol
Rating
Com'l.
Mil.
VTERM
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0
TA Operating
Temperature
0 to +70 -55 to +125
TBIAS
Temperature
Under Bias
-55 to +125 -65 to +135
Unit
V
oC
oC
TSTG Storage Temperature -55 to +125 -65 to +150 oC
Pin Descriptions
Name
A0 - A11
CS
WE
I/O0 - I/O3
Description
Address Inputs
Chip Select
Write Enable
Data Input/Output
PT Power Dissipation
1.0
1.0 W
IOUT DC Output Current
50
50 mA
NOTE:
3090 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
VCC Power
Recommended DC Operating
GND
Ground
Conditions
3090 tbl 01
Symbol
Parameter
Min. Typ. Max. Unit
VCC Supply Voltage
4.5 5.0 5.5 V
GND Ground
0 0 0V
Capacitance (TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions Max. Unit
CIN Input Capacitance
VIN = 0V
7 pF
CI/O I/O Capacitance
VOUT = 0V
7 pF
VIH Input High Voltage
2.2 ____ 6.0 V
VIL Input Low Voltage
-0.5(1) ____ 0.8 V
NOTE:
3090 tbl 05
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
NOTE:
3090 tbl 02
1. This parameter is determined by device characterization, but is not production
tested.
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
GND
Vcc
Military
-55OC to +125OC 0V
5V ± 10%
Industrial
-45OC to +85OC
0V
5V ± 10%
Commercial
0OC to +70OC
0V
5V ± 10%
3090 tbl 06
2





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