A1049

2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications Small package. High breakdown voltage: VCEO = −120 V High hFE: hFE = 200~700 Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Complementary to 2SC2459. Unit: mm Low noise: NF = 1dB (typ.), 10dB (max) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −120 −120 −5 −100 −20 200 125 −55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-4E1A Weight: 0.13 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collecto...