N-CHANNEL MOSFET. 12N60 Datasheet

12N60 MOSFET. Datasheet pdf. Equivalent

12N60 Datasheet
Recommendation 12N60 Datasheet
Part 12N60
Description N-CHANNEL MOSFET
Feature 12N60; UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ www.DataSheet4U.com .
Manufacture UTC
Datasheet
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UTC 12N60
UNISONIC TECHNOLOGIES CO., LTD
12N60
12A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 12N60 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using
UTC’s proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) < 0.8@VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N60L-TA3-T
12N60G-TA3-T
12N60L-TF1-T
12N60G-TF1-T
12N60L-TF2-T
12N60G-TF2-T
12N60L-TF3-T
12N60G-TF3-T
12N60L-T2Q-T
12N60G-T2Q-T
12N60L-T3P-T
12N60G-T3P-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
TO-3P
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
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www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UTC 12N60
12N60
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTC 12N60
12N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600 V
±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
12 A
12 A
48 A
790 mJ
24 mJ
4.5 V/ns
TO-220 / TO-262
225 W
Power Dissipation
TO-220F / TO-220F1
TO-220F2
PD
51 W
54 W
TO-3P
260 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-262
TO-3P
TO-220 / TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-3P
SYMBOL
θJA
θJC
RATING
62.5
40
0.56
2.43
2.31
0.48
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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