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Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
2SB1218A
FEATURES Power dissipation PCM:
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
1. 25¡ À0. 05
1. 01 R EF
w.DataSheet4U.com
150
mW (Tamb=25℃)
2. 30¡ À0. 05
Collector current -100 mA ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-10µA, IE=0 Ic=-2mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-6V, IC=0 VCE=-10V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA , f=200MHz VCB=-10V, IE=0, f=1MHz
-45 -45 -7 -0.1 -0.1 160 460 -0.5 80 2.7
0. 30
2. 00¡ À0. 05
µA µA
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking Q 160-260 BQ R 210-340 BR S 290-460 BS
.