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2SC5440. C5440 Datasheet

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2SC5440. C5440 Datasheet






C5440 2SC5440. Datasheet pdf. Equivalent




C5440 2SC5440. Datasheet pdf. Equivalent





Part

C5440

Description

2SC5440



Feature


Power Transistors 2SC5440 Silicon NPN tr iple diffusion mesa type For horizonta l deflection output Unit: mm ■ Feat ures 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0 .3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (1 0.0) (23.4) 22.0±0.5 • High breakd own voltage, and high reliability throu gh the use of a glass passivation laye r • High-speed switching • Wide sa fe operation area (ASO) 5˚ (4.0).
Manufacture

Panasonic Semiconductor

Datasheet
Download C5440 Datasheet


Panasonic Semiconductor C5440

C5440; 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / ■ Absolute Maximum Ratings TC = 2 5°C 18.6±0.5 (2.0) Solder Dip 5.45 0.3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter op en) VCBO 1 500 V c e. d ty Collector -emitter voltage (E-B short) VCES 1 50 0 3.3±0.3 5.5±0.3 V n d stag tinu e Collector-emitter voltage (Base open) VCEO 600 (2.0) V a e cle .


Panasonic Semiconductor C5440

con Emitter-base voltage (Collector open ) VEBO 7 V lifecy , dis Base current IB 7.5 A n u duct typed Collector current IC 15 A te tin Pro ed Peak collector current * ICP 25 A ur tin u Collector power dissipation PC 60 W ing fo iscon Ta = 25°C 3.0 in n f ollow ed d Junction temperature Tj 15 0 °C s lan Storage temperature Tstg −55 to +150 °C a o.


Panasonic Semiconductor C5440

clude pe, p Note) *: Non-repetitive pea k collector current M isccontinueindte innance ty ■ Electrical Characteristi cs TC = 25°C ± 3°C /Dis ma Paramete r Symbol Conditions D ance type, Col lector-base cutoff current (Emitter ope n) Maintentenance Emitter-base cutoff c urrent (Collector open) ain Forward cur rent transfer ratio d m Collector-emitt er saturation voltage (.

Part

C5440

Description

2SC5440



Feature


Power Transistors 2SC5440 Silicon NPN tr iple diffusion mesa type For horizonta l deflection output Unit: mm ■ Feat ures 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0 .3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (1 0.0) (23.4) 22.0±0.5 • High breakd own voltage, and high reliability throu gh the use of a glass passivation laye r • High-speed switching • Wide sa fe operation area (ASO) 5˚ (4.0).
Manufacture

Panasonic Semiconductor

Datasheet
Download C5440 Datasheet




 C5440
Power Transistors
2SC5440
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
Features
15.5±0.5 φ 3.2±0.1
3.0±0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide safe operation area (ASO)
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
/ Absolute Maximum Ratings TC = 25°C
5.45±0.3
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
1 500
V
c e. d ty Collector-emitter voltage (E-B short) VCES
1 500
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
600
V
a e cle con Emitter-base voltage (Collector open) VEBO
7
V
lifecy , dis Base current
IB
7.5
A
n u duct typed Collector current
IC
15
A
te tin Pro ed Peak collector current *
ICP
25
A
ur tinu Collector power dissipation
PC
60
W
ing fo iscon Ta = 25°C
3.0
in n follow ed d Junction temperature
Tj
150
°C
s lan Storage temperature
Tstg 55 to +150 °C
a o clude pe, p Note) *: Non-repetitive peak collector current
M isccontinueindteinnance ty Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Collector-base cutoff current (Emitter open)
Maintentenance Emitter-base cutoff current (Collector open)
ain Forward current transfer ratio
d m Collector-emitter saturation voltage
(plane Base-emitter saturation voltage
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 7.5 A
IC = 7.5 A, IB = 1.88 A
IC = 7.5 A, IB = 1.88 A
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Min Typ Max Unit
50
µA
1
mA
50
µA
5
9
3
V
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
tstg IC = 7.5 A, Resistance loaded
2.7
µs
Fall time
tf
IB1 = 1.88 A, IB2 = −3.76 A
0.2
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00146BED
1




 C5440
2SC5440
100
80
(1)
60
40
PC Ta
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
VCE(sat) IC
5
25˚C IC/IB=4
4
TC=100˚C
–25˚C
3
2
hFE IC
100
VCE=5V
TC=100˚C
25˚C
10
–25˚C
20
(2)
(3)
0
0
40
80
120
160
Ambient temperature Ta (°C)
1
0
0.1
1
10
100
Collector current IC (mA)
1
0.001 0.01 0.1
1
10 100
Collector current IC (mA)
e/ pe) Safe operation area
c ty 100
n d tage. ued ICP
a e cle s contin 10
IC
10ms
t=100µs
1ms
lifecy d, dis DC
n u t e 1
te tin urProdtiuncuedtyp 0.1
wing fodiscon 0.01
in n s follo laned Non repetitive pulse
e p TC=25˚C
d , 0.001
a o clu pe 1
10
100
1 000
M Disc (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinnance ty Collector-emitter voltage VCE (V)
Safe operation area (Horizontal operation)
35
f=64kHz, TC<90˚C
Area of safe operation with
30
respect to the single pulse
overload curve at the time of
switching ON, shutting down
25
by the high voltage spark,
holding down and like that,
during horizontal operation.
20
15
10
5
<1mA
0
0
500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
2
SJD00146BED




 C5440
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(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
/ Standards in advance to make sure that the latest specifications satisfy your requirements.
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c ty defect which may arise later in your equipment.
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