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C5440 Datasheet, Equivalent, 2SC5440.2SC5440 2SC5440 |
| Part | C5440 |
|---|---|
| Description | 2SC5440 |
| Feature | Power Transistors
2SC5440
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features
15. 5±0. 5 φ 3. 2±0. 1 5˚ 3. 0±0. 3 5˚ (4. 5) 26. 5±0. 5 (2. 0) (1. 2) (10. 0) (23. 4) 22. 0±0. 5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) 5˚ (4. 0) 5˚ 2. 0±0. 2 5˚ 1. 1±0. 1 0. 7±0. 1 / ■ Absolute Maximum Ratings TC = 25°C 18. 6±0. 5 (2. 0) Solder Dip 5. 45±0. 3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 500 V c e. d ty Collector-emit. |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part | C5440 |
|---|---|
| Description | 2SC5440 |
| Feature | Power Transistors
2SC5440
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features
15. 5±0. 5 φ 3. 2±0. 1 5˚ 3. 0±0. 3 5˚ (4. 5) 26. 5±0. 5 (2. 0) (1. 2) (10. 0) (23. 4) 22. 0±0. 5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) 5˚ (4. 0) 5˚ 2. 0±0. 2 5˚ 1. 1±0. 1 0. 7±0. 1 / ■ Absolute Maximum Ratings TC = 25°C 18. 6±0. 5 (2. 0) Solder Dip 5. 45±0. 3 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 1 500 V c e. d ty Collector-emit. |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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