Ordering number : ENN6572
2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Di...
Ordering number : ENN6572
2SB817P / 2SD1047P 2SB817P :
PNP Epitaxial Planar Silicon
Transistor
2SD1047P :
NPN Triple Diffused Planar Silicon
Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). www.DataSheet4U.com Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF characteristic.
Package Dimensions
unit : mm 2022A
[2SB817P / 2SD1047P]
15.6 14.0
2.6
3.2
3.5
4.8
2.0
1.6
2.0
20.0
1.3
1.2 15.0 20.0
0.6
1.0
1 0.6
2
3
1.4
Specifications
( ) : 2SB817P Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
5.45
Ratings (−)160 (−)140 (−)6 (−)12 (−)15 120 150 −40 to +150
Unit V V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)80V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (--)0.1 (--)0.1 Unit mA mA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as lif...