Document
HiPerFASTTM IGBT
IXGH IXGK IXGT IXGJ
50N60B 50N60B 50N60B 50N60B
VCES IC25
VCE(sat) tfi(typ) = 120
TO-247 AD (IXGH)
= 600 = 75 = 2.3
V A V
ns
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 75 50 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
G
C
E
C (TAB)
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
TO-268 (D3) ( IXGT)
G E TO-268 Leaded (IXGJ) G C E
C (TAB)
(TAB)
TO-264 AA (IXGK)
Mounting torque
TO-247AD TO-264
1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 300 °C g g g
C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-264 TO-268
E
C (TAB) D = Drain TAB = Collector
6 10 4
G = Gate E = Emitter
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1 ±100 2.3 V V µA mA nA V
Features • International standard packages • High frequency IGBT • Latest generation HDMOSTM process • High current handling capability • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with 1 screw (insulated mounting screw hole) • Switching speed for high frequency applications • High power density
95585F(12/02)
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250µA, VGE = 0 V = 250 µA, VCE = VGE
VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
© 2002 IXYS All rights reserved
IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. m a x . 25 42 4100 VCE = 25 V, VGE = 0 V, f = 1 MHz 310 95 160 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 55 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 50 50 150 120 3.0 50 50 3 200 250 4.2 0.42 TO-247 & TO-268 leaded packages TO-264 package 0.25 0.15 250 250 4.5 S
1 2 3
TO-247 AD (IXGH) Outline
gfs Cies Coes Cres QG QGE
www.DataSheet4U.com QGC
IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 ∅P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Terminals: 1 - Gate 2 -Collector 3 -Emitter Tab-Collector
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
TO-264 AA (IXGK) Outline
TO-268 (IXGT) Outline
TO-268 (IXGJ) Leaded Outline
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
Terminals: 1 - Gate 2Collector
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B
Figure 1. Saturation Voltage Characteristics
100
TJ = 25°C VGE = 15V 13V 11V 9V
Figure 2. Extended Output Characteristics
200 160
TJ = 25°C
80
VGE = 15V 13V
11V
9V
IC - Amperes
60 40 20
5V
IC - Amperes
7V
120 80 40
5V 7V
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0
0
1
2
3
4
5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Figure 3. Saturation Voltage Characteristics
100 80
TJ = 125°C V = 15V GE 13V 11V 9V
Figure 4. Temperature Dependence of VCE(sat)
1.6
VGE = 15V
VCE (sat) - Normalized
1.4 1.2 1.0
IC = 25A IC = 50A
IC = 100A
IC - Amperes
60 40
7V
0.8 0.6 0.4 25
5V
20 0
0
1
2
3
4
5
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Figure 5. Admittance Curves
100
VCE = 10V
Figure 6. Capacitance Curves
10000
f = 1Mhz Ciss
80
Capacitance - pF
IC - Amperes
60 40
TJ = 125°C .