IGBT-Module. FZ800R12KS4 Datasheet

FZ800R12KS4 IGBT-Module. Datasheet pdf. Equivalent

FZ800R12KS4 Datasheet
Recommendation FZ800R12KS4 Datasheet
Part FZ800R12KS4
Description IGBT-Module
Feature FZ800R12KS4; Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R12 KS4 Vorläufige D.
Manufacture eupec GmbH
Datasheet
Download FZ800R12KS4 Datasheet





eupec GmbH FZ800R12KS4
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
www.DataSheet4UP.ecroiomdischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80°C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Vorläufige Daten
Preliminary data
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1200
800
1200
1600
6,9
+/- 20V
800
1600
185.000
2.500
V
A
A
A
kW
V
A
A
A2s
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 800 A, VGE = 15V, Tvj = 25°C
IC = 800 A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannunggate threshold voltage IC = 32 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VGE = -15V ... + 15V, VCE = 600V
VCE = 1200V, VGE = 0V, Tvj = 25°C
VCE = 1200V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: R. Jörke
approved by: Jens Thurau
date of publication : 2000-06-14
revision: 1
1 (9)
VCE sat
min.
-
-
typ.
3,00
3,60
max.
-
-
VGE(th)
4,5
5,5
6,5
V
V
V
Cies - 52 - nF
Cres
- t.b.d. -
nF
QG - 8,4 - µC
ICES
- t.b.d. -
µA
- t.b.d. -
mA
IGES
-
- 400 nA
FZ800R12KS4, preliminary.xls
15.06.00



eupec GmbH FZ800R12KS4
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
www.DataSheet4Uris.ceotmime (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 800 A, VCC = 600V
VGE = ±15V, RG = 1,3 , Tvj = 25°C
VGE = ±15V, RG = 1,3 , Tvj = 125°C
IC = 800 A, VCC = 600V
VGE = ±15V, RG = 1,3 , Tvj = 25°C
VGE = ±15V, RG = 1,3 , Tvj = 125°C
IC = 800 A, VCC = 600V
VGE = ±15V, RG = 1,3 , Tvj = 25°C
VGE = ±15V, RG = 1,3 , Tvj = 125°C
IC = 800 A, VCC = 600V
VGE = ±15V, RG = 1,3 , Tvj = 25°C
VGE = ±15V, RG = 1,3 , Tvj = 125°C
IC = 800 A, VCC = 600V, VGE = 15V
RG = 1,3 , Tvj = 125°C, LS = 60nH
IC = 800 A, VCC = 600V, VGE = 15V
RG = 1,3 , Tvj = 125°C, LS = 60nH
tP 10µsec, VGE 15V
TVj125°C, VCC= 900V, VCEmax=VCES -LsCE ·dI/dt
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
Vorläufige Daten
Preliminary data
min. typ. max.
td,on - 100 - ns
- 125 - ns
tr - 90 - ns
- 100 - ns
td,off - 530 - ns
- 590 - ns
tf - 60 - ns
- 70 - ns
Eon - 76 - mWs
Eoff - 64 - mWs
ISC
LsCE
- 6000 -
- 12 -
A
nH
RCC’+EE’
-
t.b.d.
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 800 A, VGE = 0V, Tvj = 25°C
IF = 800 A, VGE = 0V, Tvj = 125°C
IF = 800 A, - diF/dt = 8200 A/µsec
VR = 600V, VGE = -10V, Tvj = 25°C
VR = 600V, VGE = -10V, Tvj = 125°C
IF = 800 A, - diF/dt = 8200 A/µsec
VR = 600V, VGE = -10V, Tvj = 25°C
VR = 600V, VGE = -10V, Tvj = 125°C
IF = 800 A, - diF/dt = 8200 A/µsec
VR = 600V, VGE = -10V, Tvj = 25°C
VR = 600V, VGE = -10V, Tvj = 125°C
min. typ. max.
VF
- 2,00 -
V
- 1,70 -
V
IRM - 540 - A
- 900 -
A
Qr - 60 - µAs
- 160 - µAs
Erec - 32 - mWs
- 76 - mWs
2 (9)
FZ800R12KS4, preliminary.xls
15.06.00



eupec GmbH FZ800R12KS4
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
www.DataSheet4UH.öccohmstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
λPaste = 1 W/m*K / λgrease = 1 W/m*K
Vorläufige Daten
Preliminary data
RthJC
min.
-
-
typ.
-
-
max.
0,018
0,027
K/W
K/W
RthCK
- 0,008 - K/W
Tvj - - 150 °C
Top -40 - 125 °C
Tstg -40 - 150 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Material Modulgrundplatte
material of module baseplate
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M4
terminals M8
Cu
AlN
32,2
mm
19,1
mm
> 400
M1 4,25
5,75 Nm
M2 1,7
8
2,3
10,00
Nm
Nm
G
1000
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3 (9)
FZ800R12KS4, preliminary.xls
15.06.00





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