IGBT-Modules. FZ800R17KF6CB2 Datasheet

FZ800R17KF6CB2 IGBT-Modules. Datasheet pdf. Equivalent

FZ800R17KF6CB2 Datasheet
Recommendation FZ800R17KF6CB2 Datasheet
Part FZ800R17KF6CB2
Description IGBT-Modules
Feature FZ800R17KF6CB2; Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V .
Manufacture eupec GmbH
Datasheet
Download FZ800R17KF6CB2 Datasheet





eupec GmbH FZ800R17KF6CB2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 17 KF6C B2
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
www.DataSheet4UPe.crioomdischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tP = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1700
800
1300
1600
6,6
+/- 20V
800
1600
170
4
V
A
A
A
kW
V
A
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 800A, VGE = 15V, Tvj = 25°C
IC = 800A, VGE = 15V, Tvj = 125°C
IC = 60mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
2,6
3,1
max.
3,1
3,6
VGE(th)
4,5
5,5
6,5
V
V
V
QG - 9,6 - µC
Cies - 52 - nF
Cres - 2,7 - nF
ICES - 0,02 1,5 mA
- 10 80 mA
IGES
-
- 400 nA
prepared by: Alfons Wiesenthal
approved by: Chr. Lübke; 11.08.2000
date of publication: 04.08.2000
revision: 2 (Series)
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FZ800R17KF6CB2



eupec GmbH FZ800R17KF6CB2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 17 KF6C B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
www.DataSheet4Uris.ecotimme (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 800A, VCE = 900V
VGE = ±15V, RG = 1,8, Tvj = 25°C
VGE = ±15V, RG = 1,8, Tvj = 125°C
IC = 800A, VCE = 900V
VGE = ±15V, RG = 1,8, Tvj = 25°C
VGE = ±15V, RG = 1,8, Tvj = 125°C
IC = 800A, VCE = 900V
VGE = ±15V, RG = 1,8, Tvj = 25°C
VGE = ±15V, RG = 1,8, Tvj = 125°C
IC = 800A, VCE = 900V
VGE = ±15V, RG = 1,8, Tvj = 25°C
VGE = ±15V, RG = 1,8, Tvj = 125°C
IC = 800A, VCE = 900V, VGE = 15V
RG = 1,8, Tvj = 125°C, LS = 50nH
IC = 800A, VCE = 900V, VGE = 15V
RG = 1,8, Tvj = 125°C, LS = 50nH
tP 10µsec, VGE 15V
TVj125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
min. typ. max.
td,on - 0,3 - µs
- 0,3 - µs
tr
- 0,14 -
µs
- 0,14 -
µs
td,off - 1,1 - µs
- 1,1 - µs
tf
- 0,11 -
µs
- 0,12 -
µs
Eon - 300 - mWs
Eoff - 325 - mWs
ISC
LsCE
- 3200 -
- 12 -
A
nH
RCC´+EE´
-
0,08
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 800A, VGE = 0V, Tvj = 25°C
IF = 800A, VGE = 0V, Tvj = 125°C
IF = 800A, - diF/dt = 6600A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C
VR = 900V, VGE = -10V, Tvj = 125°C
IF = 800A, - diF/dt =6600A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C
VR = 900V, VGE = -10V, Tvj = 125°C
IF = 800A, - diF/dt = 6600A/µsec
VR = 900V, VGE = -10V, Tvj = 25°C
VR = 900V, VGE = -10V, Tvj = 125°C
min. typ. max.
VF
-
2,1 2,5
V
-
2,1 2,5
V
IRM - 800 - A
- 920 -
A
Qr - 170 - µAs
- 300 - µAs
Erec - 80 - mWs
- 160 - mWs
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FZ800R17KF6CB2



eupec GmbH FZ800R17KF6CB2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 17 KF6C B2
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
www.DataSheet4U.ccohmstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
λPaste = 1 W/m*K / λgrease = 1 W/m*K
RthJC
min.
-
-
typ.
-
-
max.
0,019
0,034
K/W
K/W
RthCK
- 0,008 - K/W
Tvj - - 150 °C
Top -40 - 125 °C
Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M4
terminals M8
AlN
17 mm
10 mm
275
M1 5 Nm
M2 2 Nm
8 - 10 Nm
G
1050
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
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FZ800R17KF6CB2





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