2SC5914. C5914 Datasheet

C5914 2SC5914. Datasheet pdf. Equivalent

C5914 Datasheet
Recommendation C5914 Datasheet
Part C5914
Description 2SC5914
Feature C5914; Power Transistors 2SC5914 Silicon NPN triple diffusion mesa type Horizontal deflection output for T.
Manufacture Panasonic
Datasheet
Download C5914 Datasheet





Panasonic C5914
Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
Features
15.5±0.5 φ 3.2±0.1
3.0±0.3
High breakdown voltage: VCBO 1 500 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
/ Collector-base voltage (Emitter open) VCBO
1 500
V
5.45±0.3
e Collector-emitter voltage (E-B short) VCES
1 500
V
c type) Collector-emitter voltage (Base open) VCEO
600
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
V
le sta ntinu Base current
IB
5
A
a e cyc isco Collector current
IC
12
A
life d, d Peak collector current *
ICP
22
A
n u duct type Collector power dissipation
PC
40
W
te tin Pro ued Ta=25°C
3
four ntin Junction temperature
Tj
150
°C
wing disco Storage temperature
Tstg 55 to +150 °C
in n follo ned Note) *: Non-repetitive peak collector current
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Ma isco/Discontimnuaeindteinncalnucdeestype, pla Electrical Characteristics TC = 25°C ± 3°C
ce pe, Parameter
Symbol
Conditions
D tenan ce ty Collector-base cutoff current (Emitter open) ICBO
Mainaintenan Emitter-base cut-off current (Collector open)
d m Forward current transfer ratio
(plane Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 6 A
IC = 6 A, IB = 1.5 A
Min Typ Max Unit
50
µA
1
mA
50
µA
5
10
2.5
V
Base-emitter saturation voltage
VBE(sat) IC = 6 A, IB = 1.5 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
tstg IC = 6 A, Resistance loaded
2.7
µs
Fall time
tf
IB1 = 1.5 A, IB2 = −3.0 A
0.2
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2004
SJD00310BED
1



Panasonic C5914
2SC5914
PC Ta
IC VCE
IC VBE
80
10
12
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
IB = 2.0 A
1.8 A
Al heat sink
1.6 A
(3) Without heat sink
8
1.4 A
60
1.2 A
1.0 A
0.8 A
8
6
0.6 A
VCE = 5 V
40
(1)
0.4 A
4
0.2 A
4
Ta = 120°C
20
(2)
(3)
0
0
50
100
150
Ambient temperature Ta (°C)
2
0
0A
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
25°C
40°C
0
0
0.4
0.8
1.2
Base-emitter voltage VBE (V)
e/ pe) VCE(sat) IC
c ty 10
e. d IC / IB = 4
an edlifecycle,sdtaisgcontinue 1
n u duct typed 101
te tin Pro ued Ta=120°C
four ntin 101
g co 40°C
win dis 25°C
in ndes foll,oplaned 102
a o clu pe 101
1
10
c d in e ty Collector current IC (A)
hFE IC
102
VCE = 5 V
Ta = 120°C
25°C
40°C
10
1
101
1
10
Collector current IC (A)
1 000
800
tf IB1(END)
IC = 6.3 A
L load
600
400
200
0
0.4
0.8
1.2
1.6
2.0
Base current IB1(END) (A)
M is/Discontimnuaeintenanc tstg IB1(END)
e e, 2.0
D anc typ IC = 6.3A
L load
inten ance 1.6
Mamainten 1.2
(planed 0.8
Area of safe operation
102
ICP
t = 100 µs
10 IC
1 ms
DC
10 ms
1
101
Area of safe operation (Horizontal operation)
30
fH = 64 kHz, TC < 90°C
ASO for a single
pulse load caused by
25
EHT flashover during
horizontal operation.
20
15
10
0.4
0
0.4
0.8
1.2
1.6
2.0
Base current IB1(END) (A)
102
Non repetitive pulse
103 TC = 25°C
1
10
VCEO max.
102
103
Collector-emitter voltage VCE (V)
5
0
< 1 mA
0
500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
2
SJD00310BED



Panasonic C5914
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
/ Standards in advance to make sure that the latest specifications satisfy your requirements.
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e ) (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
pe maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
c ty defect which may arise later in your equipment.
n d ge. ed Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
sta tinu mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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