DB3 DIACS Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

SILICON BIDIRECTIONAL DIACS

Manufacture

HY ELECTRONIC

Total Page 2 Pages
Datasheet
Download DB3 Datasheet


DB3
DB3,DB4,DB6
SILICON
BIDIRECTIONAL DIACS
POWER DISSIPATION 150 mW
FEATURES
DO- 41
Three way layer two terminal, axial lead ,
hermetically sealed diacs are designed specifically for
triggering thyrisitors .The demonstrate low breakover current.
The breakover symmetry is within three volts(DB3,DB4)
or four volts(DB6).These diacs are intended for
1.0(25.4)
MIN
www.DatauSsheeient4thUy.croismitors phase control.,circuits for lamp
dimming universal motor speed control and heat
control
.205(5.2)
MAX
This diocle is also avaiable in the DO-41case.
.034(0.9)
.028(0.7)
DIA
..100870((22..70))DIA
DO-35(GLASS)
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079 MAX
(2.0)
1.0(25.4)
MIN
1.083(27.5)
MIN
ABSOLUTE RATINGS
Dimensions in inches and (millimeters)
PARAMETERS
Power Dissipation on Printed
Cir cuit(L=10mm)
TA=50
Repetitive Peak on-state
Tp=10uS
Current
f=100HZ
Storage and Operating Juntion Temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
Pc
ITRM
TSTG/TJ
DB3
VALUE
DB4
150
2.0
-44 to+125/-40 to+110
DB6
PAPRAMETERS
Breakover Voltage*
Breakover Voltage Symmetry
Dynamic Breakover Voltage
Output Voltage*
Breakover Current*
Rise Time*
Leakage Current*
SYMBOLS
VBO
1+VBOI-
1-VBOI
1±V1
VO
IBO
tr
IB
TEST CONDITIONS
C=22nf**
See Diagram 1
C=22nf**
See Diagram 1
I=(IBO to IF=10mA)
See FIG 1
See FIG 2
C=22nf**
See FIG 3
IB=0.5 VBO MAX
See FIG 3
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
DB3
28
32
36
VALUE
DB4
35
40
45
±3
DB6
56
60
70
5
5
100
1.5
10
NOTE:* Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
~ 211 ~
UNITS
mW
A
UNITS
V
V
V
V
uA
uS
uA

DB3
RATING AND CHARACTERISTIC CURVES
DB3,DB4,DB6
FIG.1-CURRENT-VOLTAGE CHARACTERISTICS
+IF
10mA
-V
www.DataSheet4U.com
IB
IB
0.5VBO
+V
V
VBO
FIG.2-TEST CIRCUIT FOR OUTPUT VOLATGE
220V
60HZ
10KΩ
500KΩ
D.U.T
VO
R=20Ω
0.1uF
-IF
FIG.3-TEST CIRCUIT SEE FIG.2 ADJUST R
FOR Ip=0.5A
90%
IP
10%
tr
FIG.5-RELATIVE VARIATION OF VBO VERSUS
JUNCTION TEMPERATURE(TYPICAL VALUES)
VBO(IJ)
VBO(TJ=25℃)
1.08
1.06
1.04
TJ = (°C)
1.02
1.00
25 50 75 100 125
P(mW )
FIG.4-TEST CIRCUIT FOR OUTPUT
VOLATGE
160
140
120
100
80
60
40 Tamb(°C)
20
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.6-PEAK PULSE CURRENT VERSUS PULSE
DURATION (MAXIMUM VALUES)
ITRM(A)
2
1
f = 100Hz
Tjinitial=25°C
0.1 tp(us)
0.01
10
100
1000
10000
~ 212 ~


Features DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS FEATURES ●Three way layer two termina l, axial lead , POWER DISSIPATION DO- 41 150 mW DO-35(GLASS) .020 TYP. (0.5 1) 1.083(27.5) MIN hermetically sealed diacs are designed specifically for tr iggering thyrisitors .The demonstrate l ow breakover current. The breakover sym metry is within three volts(DB3,DB4) or four volts(DB6).These diacs are intend ed for www.DataSheet4U.com use in thyri sitors phase control.,circuits for lamp 1.0(25.4) MIN .034(0.9) DIA .028(0.7 ) dimming universal motor speed contro l and heat control ●This diocle is al so avaiable in the DO-41case. .205(5.2 ) MAX .107(2.7) DIA .080(2.0) 1.0(25.4) MIN .150(3.8) MAX .079 MAX (2.0) 1.0 83(27.5) MIN Dimensions in inches and (millimeters) ABSOLUTE RATINGS PARAMET ERS Power Dissipation on Printed Cir cu it(L=10mm) Repetitive Peak on-state Cur rent TA=50℃ Tp=10uS f=100HZ TSTG/TJ - 44 to+125/-40 to+110 ℃ ITRM 2.0 A SYM BOL DB3 Pc VALUE DB4 150 DB6 mW UNITS Storage and Operating Juntion Te.
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