DB3 DIAC Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

SIGNAL BIDIRECTIONAL DIAC

Manufacture

Daesan Electronics

Total Page 2 Pages
Datasheet
Download DB3 Datasheet


DB3
DB3 / DB4
SIGNAL BIDIRECTIONAL
DIAC
Features
The three layer, two terminal, axial lead,
hermetically sealed diacs are designed
specifically for triggering thyristors.
www.DataTShheeeyt4Ud.ecommonstrate low breakover current
at breakover voltage as they withstand
peak pulse current. The breakover
symmetry is within three volts.
These diacs are intended for use in
thyristors phase control, circuits for lamp
dimming, universal motor speed control,
and heat control
DEC's DB3/DB4 are bi-directional trigged
diode designed to operate in conjunction
with Triacs and SCR's
DO-35(GLASS)
R-1
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.102(2.6)
0.091(2.3)
DIA.
0.154(3.9)
MAX.
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
0.025(0.65)
0.021(0.55)
DIA.
Dimensions in inches and (millimeters)
Absolute Ratings (Limiting Values)
Symbols
Pc
ITRM
TSTG/TJ
Parameters
Power Dissipation on Printed
Circuit(L=10mm)
TA=50
Repetitive Peak on-state
Current
tp=10 s
F=100Hz
Storage and Operating Junction Temperature
Value
DB3 DB4
150
2.0 2.0
-40 to +125/-40 to 110
0.787(20.0)
MIN.
0.126(3.2)
0.106(2.7)
0.787(20.0)
MIN.
Units
mW
A
Electrical characteristics
Symbols
Parameters
Test Conditions
VBO Breakover Voltage (Note 2)
|+VBO|-
| - VBO|
| V|
VO
IBO
tr
IB
Breakover Voltage Symmetry
Dynamic Breakover Voltage (Note 1)
Output Voltage (Note 1)
Breakover Current (Note 1)
Rise Time (Note 1)
Leakage Current (Note 1)
C=22nF(Note2)
See diagram 1
C=22nF(Note2)
See diagram 1
I=(IBO to IF=10mA)
See diagram 1
See diagram 2
C=22nF(Note2)
See diagram 3
VB=0.5 VBO max
see diagram 1
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
Notes:
(1) Electrical characteristics applicable in both forward and reverse directions
(2) Connected in parallel with the devices
DB3
28
32
36
Value
3
5
5
100
1.5
10
DB4
35
40
45
Units
V
V
V
V
A
S
A

DB3
RATINGS AND CHARACTERISTIC CURVES DB3/DB4
DIAGRAM 1 : Current-voltage characteristics
www.DataSheet4U.com
+IF
10mA
IBO
IB
-V
0.5 VBO
+V
V
VBO
-IF
FIG.1-Power dissipation versus ambient
temperature (maximum values)
P (mW)
160
140
120
100
80
60
40
20 Tamb( )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.3-Peak pulse current versus pulse duration
(maximum values)
ITRM(A)
2
1
F=100Hz
TJ initial=25
0.1
0.01
10
tp(mS)
100
1000
10000
DIAGRAM 2 : Test circuit for output voltage
10KW
220V
50Hz
500KW
0.1mF
D.U.T
Vo
R=20W
DIAGRAM 3 : Test circuit see diagram2 adjust R for
Ip=0.5A
90% Ip
10%
tr
FIG.2-Relative variation of VBO versus junction
temperature (typical values)
VBO(TJ)
VBO(TJ=25 )
1.08
1.06
1.04
1.02
1.00
25
50
TJ ( )
75 100 125


Features DB3 / DB4 Features The three layer, two terminal, axial lead, hermetically seal ed diacs are designed specifically for triggering thyristors. www.DataSheet4U. com They demonstrate low breakover curr ent at breakover voltage as they withst and peak pulse current. The breakover s ymmetry is within three volts. These di acs are intended for use in thyristors phase control, circuits for lamp dimmin g, universal motor speed control, and h eat control DEC's DB3/DB4 are bi-direct ional trigged diode designed to operate in conjunction with Triacs and SCR's SIGNAL BIDIRECTIONAL DIAC DO-35(GLASS) 0.075(1.9) MAX. DIA. 0.102(2.6) 0.091( 2.3) DIA. R-1 1.083(27.5) MIN. 0.787 (20.0) MIN. 0.154(3.9) MAX. 0.126(3.2 ) 0.106(2.7) 0.020(0.52) MAX. DIA. 1. 083(27.5) MIN. 0.025(0.65) 0.021(0.55) DIA. 0.787(20.0) MIN. Dimensions in inches and (millimeters) Absolute Rati ngs (Limiting Values) Symbols Pc ITRM T STG/TJ Parameters Power Dissipation on Printed Circuit(L=10mm) Repetitive Peak on-state Current Value.
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