BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS
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Designed for Complementary Use with the BD241 Se...
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER
TRANSISTORS
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Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
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MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD242 Collector-emitter voltage (RBE = 100 Ω) BD242A BD242B BD242C BD242 Collector-emitter voltage (IC = -30 mA) BD242A BD242B BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the
transistor to operate safely in a...