IGBT-Module. 2MBI1200U4G-120 Datasheet

2MBI1200U4G-120 IGBT-Module. Datasheet pdf. Equivalent

2MBI1200U4G-120 Datasheet
Recommendation 2MBI1200U4G-120 Datasheet
Part 2MBI1200U4G-120
Description IGBT-Module
Feature 2MBI1200U4G-120; Tentative (Under developmemt) Specification (1200A/1200V-2in1 IGBT-Module) www.DataSheet4U.com Dev.
Manufacture Fuji Electric
Datasheet
Download 2MBI1200U4G-120 Datasheet





Fuji Electric 2MBI1200U4G-120
http://www.fujielectric.com/products/semiconductor/
2MBI1200U4G-120
IGBT MODULE (U series)
1200V / 1200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Gate-Emitter voltage
VGES
Ic Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Mounting (*2)
M6
Screw torque Terminals (*3)
M8
M4
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Note *3: Recommendable Value : Main Terminals 8~10 Nm (M8)
Sense Terminals 1.7~2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery
Lead resistance, terminal-chip
Thermal resistance characteristics
Symbols Conditions
ICES VGE = 0V, VCE = 1200V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
Tj=25°C
(main terminal) VGE = 15V
Tj=125°C
VCE (sat)
IC = 1200A
Tj=25°C
(chip)
Tj=125°C
Cies
VCE = 10V, VGE = 0V, f = 1MHz
ton VCC = 600V RGon = 3.3Ω
tr
IC = 1200A
RGoff = 0.82Ω
toff VGE = ±15V
tf Tj = 125ºC
VF Tj=25°C
(main terminal) VGE = 0V
Tj=125°C
VF IF = 1200A
Tj=25°C
(chip)
Tj=125°C
trr IF = 1200A
R lead
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound (*4)
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings
1200
±20
1600
1200
3200
2400
1200
2400
6250
150
-40 ~ +125
4000
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 1600
5.5 6.5 7.5
- 2.22 2.41
- 2.42 -
- 1.90 2.05
- 2.10 -
- 135 -
- 1.35 -
- 0.65 -
- 0.80 -
- 0.20 -
- 1.97 2.16
- 2.07 -
- 1.65 1.80
- 1.75 -
- 0.45 -
- 0.27 3450
Units
mA
nA
V
V
nF
µs
V
µs
Characteristics
min. typ. max.
- - 0.020
- - 0.033
- 0.006 -
Units
°C/W
1



Fuji Electric 2MBI1200U4G-120
2MBI1200U4G-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25ºC,chip
2800
2400
VGE=20V 15V 12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
2800
2400
VGE=20V 15V
12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25ºC,chip
10
8
6
4
Ic=2400A
2 Ic=1200A
Ic=600A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
10
Coes
1
0 10 20
Collector-Emitter voltage : VCE [V]
30
1000
Dynamic Gate charge (typ.)
VCC=600V, IC=1200A, Tj= 25°C
25
800
VCE
600
20
VGE
15
400 10
200 5
00
0 1000 2000 3000 4000 5000 6000
Gate charge : Qg [ nC ]
2



Fuji Electric 2MBI1200U4G-120
2MBI1200U4G-120
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RGon=3.3Ω, RGoff=0.82Ω, Tj= 125°C
1.8
1.6
1.4
1.2
1.0 ton
0.8 toff
0.6
0.4 tr
0.2 tf
0.0
0
400
800
1200
1600
Collector current : Ic [ A ]
2000
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RGon=3.3Ω, RGoff=0.82Ω, Tj= 125°C
500
450
Eoff
400
350
300
250 Eon
200
150 Err
100
50
0
0
400
800
1200
1600
2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
2800
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
2400
2000
1600
1200
800
400
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
3
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C
6.0
ton
5.0
4.0
3.0 tr
2.0 tof
1.0
tf
0.0
0 2 4 6 8 10 12 14 16 18
Gate resistance : RG [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C
1000
900
Eon
800
700
600
500
Eoff
400
300
200
100 Err
0
0 2 4 6 8 10 12 14 16 18
Gate resistance : RG [ Ω ]





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