K2098 Datasheet PDF Download, Fuji Electric





(PDF) K2098 Datasheet Download

Part Number K2098
Description 2SK2098
Manufacture Fuji Electric
Total Page 3 Pages
PDF Download Download K2098 Datasheet PDF

Features: 2SK2098-01MR N-CHANNEL SILICON POWER MOS FET Features High current Low on-resist ance No secondary breakdown Low driving power High forward Transconductance ww w.DataSheet4U.com Avalanche-proof FUJI POWER MOSFET FAP-III SERIES Outline D rawings TO-220F15 Applications Motor c ontrollers General purpose power amplif ier DC-DC converters 2.54 3. Source J EDEC EIAJ SC-67 Maximum ratings and c haracteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous dr ain current Pulsed drain current Contin uous reverse drain current Gate-source peak voltage Max. power dissipation Ope rating and storage temperature range Sy mbol V DS ID ID(puls] IDR VGS PD Tch Ts tg Rating 150 20 80 20 ±20 50 +150 -55 to +150 Unit V A A A V W °C °C Equi valent circuit schematic Drain(D) Gate (G) Source(S) Electrical characterist ics (Tc =25°C unless otherwise specifi ed) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source .

Keywords: K2098, datasheet, pdf, Fuji Electric, 2SK2098, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

2SK2098-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
FAP-III SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
www.DataSheet4AU.vcaomlanche-proof
Outline Drawings
TO-220F15
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
IDR
VGS
PD
Tch
Tstg
Rating
150
20
80
20
±20
50
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
2.54
JEDEC
EIAJ
3. Source
SC-67
Equivalent circuit schematic
Gate(G)
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=150V VGS=0V
VGS=±20V VDS=0V
ID=10A
ID=10A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=25
ID=20A
VGS=10V
Tch=25°C
Tch=125°C
VGS=4V
VGS=10V
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
150
1.0 1.5
2.5
10 500
0.2 1.0
10 100
0.065 0.100
0.055 0.080
10 20
2300 3450
330 500
150 230
15 25
20 30
450 700
100 150
20
1.00
1.50
125
0.6
V
V
µA
mA
nA
S
pF
ns
A
V
ns
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-a)
Rth(ch-c)
Test Conditions
channel to ambient
channel to case
Min. Typ.
Max.
62.5
2.5
Units
°C/W
°C/W
1

        






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)