Planar Transistors. 2N5172 Datasheet

2N5172 Transistors. Datasheet pdf. Equivalent

2N5172 Datasheet
Recommendation 2N5172 Datasheet
Part 2N5172
Description General Purpose Si-Epitaxial Planar Transistors
Feature 2N5172; 2N5172 2N5172 NPN Version 2006-05-15 Power dissipation Verlustleistung E BC General Purpose Si-Epi.
Manufacture Diotec Semiconductor
Datasheet
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Diotec Semiconductor 2N5172
2N5172
2N5172
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-15
Power dissipation
Verlustleistung
E BC
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
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2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-volt. – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
Tj
TS
Grenzwerte (TA = 25°C)
2N5172
25 V
25 V
5V
625 mW 1)
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 10 V, IC = 10 mA
Small-Signal current gain – Kleinsignal-Stromverstärkung
VCE = 10 V, IC = 1 mA, f = 1.0 kHz
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 25 V (E open)
VCB = 25 V, Tj = 100°C (E open)
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 25 V (B-E short)
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
VEB = 5 V (C open)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 100 – 500
hfe 100 – 750
ICBO
ICBO
– 100 nA
– 10 µA
ICES
– 100 nA
IEBO
– 100 nA
1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1



Diotec Semiconductor 2N5172
2N5172
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA
VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
VBEsat
Base-Emitter-voltage – Basis-Emitter-Spannung
VCE = 10 V, IC = 10 mA
VBE(on)
Gain-Bandwidth Product – Transitfrequenz
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VCE = 5 V, IC = 2 mA, f = 20 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE =ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 0.25 V
– 0.75 V –
0.5 V – 1.2 V
– 120 MHz –
1.6 pF – 10 pF
< 200 K/W 1)
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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© Diotec Semiconductor AG





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