2SK2604. K2604 Datasheet

K2604 2SK2604. Datasheet pdf. Equivalent

K2604 Datasheet
Recommendation K2604 Datasheet
Part K2604
Description 2SK2604
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Datasheet
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Toshiba Semiconductor K2604
2SK2604
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2604
Switching Regulator Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 1.9 (typ.)
l High forward transfer admittance : |Yfs| = 3.8 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 640 V)
l Enhancementmode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20k )
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
800
800
±30
5
15
125
370
5
12.5
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.0 °C / W
50 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-06-27



Toshiba Semiconductor K2604
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 640 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3 A,
VDS = 15 V, ID = 3 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2604
Min Typ. Max
— — ±10
±30 —
— — 100
800 —
2.0 — 4.0
— 1.9 2.2
1.0 3.8
— 1080 —
— 16 —
— 105 —
Unit
µA
V
µA
V
V
S
pF
— 40 —
Switching time
Turnon time
Fall time
ton
tf
— 80 —
ns
— 40 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 5 A
Qgd
— 140 —
— 34 —
— 16 —
— 18 —
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
——
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / µs
Typ. Max
—5
— 15
1000
7.5
1.9
Unit
A
A
V
ns
µC
Marking
2 2002-06-27



Toshiba Semiconductor K2604
2SK2604
3 2002-06-27





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