OL2013R

OL2013R 13 Element SMD Phototransistor Array Features High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Custom design available Single chip placement for high speed applications www.DataSheet4U.com Application Optical Encoders (absolut, incremental, multi turn) Edge detection for paper Multi Element Sensor Array Absolute Maximum Ratings Storage and Operating Temperature -35 to +85 ºC (*) Solder Temperature (Vapor Phase 235 ºC Reflow for 30 sec) (*) Military Temperature range available on request Electrical Specifications (TA = 25ºC) Parameters 100% tested at waferprobe Parameter ICE0 @ 52.0 V IDARK @ 32.0 V IEC0 @ 7.7 V VCEst (I C = 2.0 mA, IB = 22.2 µA) HFE (I C = 2.0 mA, VCE = 5.0 V) Units µA nA µA mV Min Typ 0.1 1.0 0.1 290.0 750.0 Max 100.0 100.0 100.0 400.0 1000.0 500.0 Additional Parameters tested for qualification and on a lot sample basis Rise time: 10.0 µs (VCC = 5.0 V, RL = 1.2 kΩ, CL = 8.0 pF, VE(peak) = 1.0 V) Fall time: 13.0 µs (VCC = 5.0 V, RL = 1.2 kΩ, CL = 8.0 pF, VE(peak) = 1.0 V) Responsitivity peak wavelength: 880 nm Note Please see part ET8001, precision schmitt trigger and comparator array with hysteresis tracking function for use with this phototransistor array. OPTOLAB Microsystems GmbH, Haarbergstr. 61, 99097 Erfurt / Germany, Tel.: ++49-361-422 906-0, Fax ++49-361-422 906 50 We reserve the right to make technical changes at any time without prior notice. More de...