STU/D3055L2
SamHop Microelectronics Corp. Feb.01 2005 ver1.3
N-Channel Logic Level Enhancement Mode Field Effect Transi...
STU/D3055L2
SamHop Microelectronics Corp. Feb.01 2005 ver1.3
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
www.DataSheet4U.com 20V
FEATURES
(mW)
ID
18A
RDS(ON)
Max
Super high dense cell design for low RDS(ON).
40 @ VGS = 10V 45 @ VGS = 4.5V
Rugged and reliable. TO-252 and TO-251 Package.
D
D G S
G D S
G
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a -Pulsed @TC=25 C Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 12 18 30 15 50 -55 to 175 Unit V V A A A W C
Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
1
S T U/D3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current
www.DataSheet4U.com
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
Condition
V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =6.0A V GS =4.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A
Min Typ C Max Unit
20 1 100 0.7 1.2 25 30 15 7 614 151 116 1.8 40 45 V uA nA V
m-ohm m-ohm
Gate-Body Leakage
ON CHAR ACTE R IS TIC...