2SC5132A. C5132A Datasheet

C5132A 2SC5132A. Datasheet pdf. Equivalent

C5132A Datasheet
Recommendation C5132A Datasheet
Part C5132A
Description 2SC5132A
Feature C5132A; 2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection out.
Manufacture Renesas
Datasheet
Download C5132A Datasheet





Renesas C5132A
2SC5132A
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
www.DataSheet4U.com • High breakdown voltage
VCES = 1500 V, IC = 8 A
• Built–in damper diode type
• Isolated package
TO-3P•FM
TO–3PFM (N)
C
B 1. Base
2. Collector
1
2
3. Emitter
E3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
VCES
1500
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC 8 A
———————————————————————————————————————————
Collector surge current
ic(surge)
16
A
———————————————————————————————————————————
Collector power dissipation
PC*1
50
W
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Diode current
ID 6 A
———————————————————————————————————————————
Note: 1. Value at Tc = 25°C



Renesas C5132A
2SC5132A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Emitter to base breakdown
voltage
V(BR)EBO 6
— — V IE = 400 mA, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICES
500 µA
VCE = 1500 V, RBE = 0
———————————————————————————————————————————
DC current transfer ratio
hFE — — 25 — VCE = 5 V, IC = 1 A
———————————————————————————————————————————
www.DataSheet4U.com Collector to emitter saturation VCE(sat) — — 5
voltage
V IC = 5 A, IB = 1.25 A
———————————————————————————————————————————
Base to emitter saturation
voltage
VBE(sat) — — 1.5 V IC = 5 A, IB = 1.25 A
———————————————————————————————————————————
Forward voltage of damper
diode
VECF
— — 2.0 V IF = 6 A
———————————————————————————————————————————
Fall time
tf — 0.2 0.4 µsec ICP = 5 A, IB1 = 1 A,
fH = 31.5kHz
———————————————————————————————————————————
Maximum Collector Power
Dissipation Curve
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Area of Safe Operation
20
f = 15.75 kHz
(100 V, 16 A)
Ta = 25 °C
For picture tube arcing
10
(800 V, 3 A)
0.5 mA
0 400 800 1200 1600 2000
Collector to Emitter Voltage V CE (V)



Renesas C5132A
2SC5132A
www.DataSheet4U.com
Typical Output Charactristics
5 1.0 A 0.9 A 0.8 A
0.7 A
0.6 A
4 0.5 A
0.4 A
3 0.3 A
0.2 A
2
0.1 A
1
Tc = 25 °C
IB=0
0 5 10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Curret
100
50
25 °C
20 75 °C
10
5 Tc = –25 °C
2 VCE = 5 V
1
0.1 0.2
0.5 1
2
5
Collector Current I C (A)
10
Collector to Emitter Saturation Voltage
vs. Collector Current
5
IC/I B=4
2
1
0.5
Tc = –25 °C
25 °C
0.2 75 °C
0.1
0.05
0.1 0.2 0.5 1 2
5
Collector Current I C (A)
10
Base to Emitter Saturation Voltage
vs. Collector current
10
5 IC/I B=4
2
Tc = –25°C
1
0.5 25 °C
75 °C
0.2
0.1 0.2 0.5 1 2
5 10
Collector Current I C (A)





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